Color | Voltage drop [ΔV] | Wavelength [nm] | Semiconductor material |
Infrared | ΔV < 1.63 | λ > 760 |
Gallium arsenide (GaAs) Aluminium gallium arsenide (AlGaAs) |
Red | 1.63 < ΔV < 2.03 | 610 < λ < 760 |
Aluminium gallium arsenide (AlGaAs) Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium(III) phosphide (GaP) |
Orange | 2.03 < ΔV < 2.10 | 590 < λ < 610 |
Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium(III) phosphide (GaP) |
Yellow | 2.10 < ΔV < 2.18 | 570 < λ < 590 |
Gallium arsenide phosphide (GaAsP) Aluminium gallium indium phosphide (AlGaInP) Gallium(III) phosphide (GaP) |
Green | 1.9 < ΔV < 4.0 | 500 < λ < 570 |
Traditional green: Gallium(III) phosphide (GaP) Aluminium gallium indium phosphide (AlGaInP) Aluminium gallium phosphide (AlGaP) Pure green: Indium gallium nitride (InGaN) / Gallium(III) nitride (GaN) |
Blue | 2.48 < ΔV < 3.7 | 450 < λ < 500 |
Zinc selenide (ZnSe) Indium gallium nitride (InGaN) Silicon carbide (SiC) as substrate Silicon (Si) as substrate—under development |
Violet | 2.76 < ΔV < 4.0 | 400 < λ < 450 | Indium gallium nitride (InGaN) |
Purple | 2.48 < ΔV < 3.7 | Multiple types |
Dual blue/red LEDs, blue with red phosphor, or white with purple plastic |
Ultraviolet | 3 < ΔV < 4.1 | λ < 400 |
Indium gallium nitride (InGaN) (385-400 nm) Diamond (235 nm) Boron nitride (215 nm) Aluminium nitride (AlN) (210 nm) Aluminium gallium nitride (AlGaN) Aluminium gallium indium nitride (AlGaInN)—down to 210 nm |
Pink | ΔV ~ 3.3 | Multiple types |
Blue with one or two phosphor layers, yellow with red, orange or pink phosphor added afterwards, White with pink plastic or white phosphors with pink pigment or dye over top. |
White | 2.8 < ΔV < 4.2 | Broad spectrum |
Cool / Pure White: Blue/UV diode with yellow phosphor Warm White: Blue diode with orange phosphor |